| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 5mΩ |
| Rated Power Dissipation: | 2.8|W |
| Qg Gate Charge: | 29nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 19A |
| Turn-on Delay Time: | 15ns |
| Turn-off Delay Time: | 21ns |
| Rise Time: | 19ns |
| Fall Time: | 4.4ns |
| Operating Temp Range: | -40°C to +150°C |
| Gate Source Threshold: | 1.8V |
| Technology: | Si |
| Height - Max: | 0.53m |
| Length: | 5.45m |
| Input Capacitance: | 3765pF |
| 封装类型： | DIRECTFET |
| 安装方式： | Surface Mount |
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