Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | -30V |
Drain-Source On Resistance-Max: | 0.035Ω |
Rated Power Dissipation: | 2.5W |
Qg Gate Charge: | 92nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | -10A |
Turn-on Delay Time: | 18ns |
Turn-off Delay Time: | 59ns |
Rise Time: | 49ns |
Fall Time: | 60ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | -2.04V |
Technology: | Si |
Height - Max: | 4mm |
Length: | 5mm |
Input Capacitance: | 1700pF |
封装类型: | SOIC-8 |
安装方式: | Surface Mount |
收藏 0
分享 0