Fet Type: | Dual N-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 0.135Ω |
Rated Power Dissipation: | 1.25|W |
Qg Gate Charge: | 5.3nC |
Gate-Source Voltage-Max [Vgss]: | 12V |
Drain Current: | 2.4A |
Turn-on Delay Time: | 5.7ns |
Turn-off Delay Time: | 15ns |
Rise Time: | 24ns |
Fall Time: | 16ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 0.7V |
Technology: | Si |
Input Capacitance: | 260F |
封装类型: | MICRO-8 |
安装方式: | Surface Mount |
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