| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 8.4mΩ |
| Rated Power Dissipation: | 110W |
| Qg Gate Charge: | 69nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 79A |
| Turn-on Delay Time: | 13ns |
| Turn-off Delay Time: | 55ns |
| Rise Time: | 35ns |
| Fall Time: | 46ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 2290pF |
| 封装类型： | TO-252-3 (DPAK) |
| 安装方式： | Surface Mount |
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