| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.065Ω |
| Rated Power Dissipation: | 110W |
| Qg Gate Charge: | 63nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 31A |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 39ns |
| Rise Time: | 66ns |
| Fall Time: | 63ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 1200pF |
| 封装类型： | TO-252AA |
| 安装方式： | Surface Mount |
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