Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 0.175Ω |
Rated Power Dissipation: | 38W |
Qg Gate Charge: | 19nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 11A |
Turn-on Delay Time: | 13ns |
Turn-off Delay Time: | 23ns |
Rise Time: | 55ns |
Fall Time: | 37ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 350pF |
封装类型: | TO-252AA |
安装方式: | Surface Mount |
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