| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 14mΩ |
| Rated Power Dissipation: | 190W |
| Qg Gate Charge: | 140nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 73A |
| Turn-on Delay Time: | 18ns |
| Turn-off Delay Time: | 53ns |
| Rise Time: | 87ns |
| Fall Time: | 70ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 4.83mm |
| Length: | 10.67mm |
| Input Capacitance: | 3550pF |
| 封装类型： | TO-263-3 (D2PAK) |
| 安装方式： | Surface Mount |
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