| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.063Ω |
| Rated Power Dissipation: | 3.8W |
| Qg Gate Charge: | 74nC |
| Gate-Source Voltage-Max [Vgss]: | 16V |
| Drain Current: | 36A |
| Turn-on Delay Time: | 11ns |
| Turn-off Delay Time: | 39ns |
| Rise Time: | 81ns |
| Fall Time: | 62ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2V |
| Technology: | Si |
| Height - Max: | 4.83mm |
| Length: | 10.67mm |
| Input Capacitance: | 1800pF |
| 封装类型： | TO-263-3 (D2PAK) |
| 安装方式： | Surface Mount |
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