Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 116mΩ |
Rated Power Dissipation: | 1.25W |
Qg Gate Charge: | 2.5nC |
Gate-Source Voltage-Max [Vgss]: | 16V |
Drain Current: | 2.7A |
Turn-on Delay Time: | 5.4ns |
Turn-off Delay Time: | 6.8ns |
Rise Time: | 6.3ns |
Fall Time: | 4.2ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2.5V |
Technology: | Si |
Height - Max: | 1.12mm |
Length: | 3.04mm |
Input Capacitance: | 290pF |
封装类型: | SOT-23 (SC-59,TO-236) |
安装方式: | Surface Mount |
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