| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 154mΩ |
| Rated Power Dissipation: | 1.3W |
| Qg Gate Charge: | 1nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 2.7A |
| Turn-on Delay Time: | 4.1ns |
| Turn-off Delay Time: | 4.5ns |
| Rise Time: | 3.3ns |
| Fall Time: | 2.9ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.3V |
| Technology: | Si |
| Height - Max: | 1.02mm |
| Length: | 3.04mm |
| Input Capacitance: | 110pF |
| 封装类型： | SOT-23 (SC-59,TO-236) |
| 安装方式： | Surface Mount |
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