| Fet Type: | Dual N/P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 25V |
| Drain-Source On Resistance-Max: | 4Ω/1.1Ω |
| Rated Power Dissipation: | 300mW |
| Qg Gate Charge: | 0.29nC/1.1nC |
| Gate-Source Voltage-Max [Vgss]: | 8V |
| Drain Current: | 0.22A/0.41A |
| Turn-on Delay Time: | 5ns/7ns |
| Turn-off Delay Time: | 4ns/55ns |
| Rise Time: | 4.5ns/8ns |
| Fall Time: | 3.2ns/35ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 0.85V/0.82V |
| Technology: | DMOS |
| Input Capacitance: | 9.5pF/62pF |
| 封装类型： | SOT-363 (SC-70-6, SC-88) |
| 安装方式： | Surface Mount |
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