Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 3.7mΩ |
Rated Power Dissipation: | 2.5W |
Qg Gate Charge: | 165nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 25A |
Turn-on Delay Time: | 27ns |
Turn-off Delay Time: | 63ns |
Rise Time: | 28ns |
Fall Time: | 16ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | Si |
Height - Max: | 1.05mm |
Length: | 5.1mm |
Input Capacitance: | 9420pF |
封装类型: | POWER 56-8 |
安装方式: | Surface Mount |
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