| Fet Type: | Dual P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | -12V |
| Drain-Source On Resistance-Max: | 115MΩ |
| Rated Power Dissipation: | 1.4W |
| Qg Gate Charge: | 17.9nC |
| Gate-Source Voltage-Max [Vgss]: | 8V |
| Drain Current: | -3.8A |
| Turn-on Delay Time: | 5.7ns |
| Turn-off Delay Time: | 27.8ns |
| Rise Time: | 11.5ns |
| Fall Time: | 26.4ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | -1V |
| Technology: | Si |
| Height - Max: | 0.555mm |
| Length: | 2.075mm |
| Input Capacitance: | 915pF |
| 封装类型： | UDFN-6 |
| 安装方式： | Surface Mount |
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