| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 23mΩ |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 11nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | 8.1A |
| Turn-on Delay Time: | 5.9ns |
| Turn-off Delay Time: | 34ns |
| Rise Time: | 13ns |
| Fall Time: | 15ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.1V |
| Technology: | Si |
| Height - Max: | 1.75mm |
| Length: | 5mm |
| Input Capacitance: | 1020pF |
| 封装类型： | SOIC-8 |
| 安装方式： | Surface Mount |
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