| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 50V |
| Drain-Source On Resistance-Max: | 7.5Ω |
| Rated Power Dissipation: | 340mW |
| Qg Gate Charge: | 0.26nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 230mA |
| Turn-on Delay Time: | 13ns |
| Turn-off Delay Time: | 48ns |
| Rise Time: | 11ns |
| Fall Time: | 25ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.6V |
| Technology: | Si |
| Input Capacitance: | 24pF |
| 封装类型： | SOT-883 |
| 安装方式： | Surface Mount |
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