| 欧盟限制某些有害物质的使用 | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| 产品类别 | Power MOSFET |
| Process Technology | TMOS |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Voltage (V) | 8 |
| Maximum Gate Threshold Voltage (V) | 0.95 |
| Maximum Continuous Drain Current (A) | 1.2 |
| Maximum Gate Source Leakage Current (nA) | 5000 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain Source Resistance (mOhm) | 310@4.5V |
| Typical Gate Charge @ Vgs (nC) | 0.63@4.5V |
| Typical Input Capacitance @ Vds (pF) | 41@10V |
| Maximum Power Dissipation (mW) | 660 |
| Typical Fall Time (ns) | 2 |
| Typical Rise Time (ns) | 2 |
| Typical Turn-Off Delay Time (ns) | 4 |
| Typical Turn-On Delay Time (ns) | 1 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Supplier Package | DFN |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 0.36(Max) |
| Package Length | 0.62 |
| Package Width | 0.62 |
| PCB changed | 3 |
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