欧盟限制某些有害物质的使用 | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
产品类别 | Power MOSFET |
Process Technology | TMOS |
Configuration | Single Quad Drain |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 40 |
Maximum Gate Source Voltage (V) | 8 |
Maximum Gate Threshold Voltage (V) | 0.9 |
Maximum Continuous Drain Current (A) | 8.1 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (mOhm) | 18@4.5V |
Typical Gate Charge @ Vgs (nC) | 19.4@4.5V |
Typical Input Capacitance @ Vds (pF) | 1625@20V |
Maximum Power Dissipation (mW) | 3800 |
Typical Fall Time (ns) | 15 |
Typical Rise Time (ns) | 8 |
Typical Turn-Off Delay Time (ns) | 35 |
Typical Turn-On Delay Time (ns) | 5 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Automotive | No |
Standard Package Name | DFN |
Pin Count | 6 |
Supplier Package | DFN-MD EP |
Military | No |
Mounting | Surface Mount |
Package Height | 0.61(Max) |
Package Length | 2.1(Max) |
Package Width | 2.1(Max) |
PCB changed | 6 |
Lead Shape | No Lead |