| 欧盟限制某些有害物质的使用 | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| 产品类别 | Power MOSFET |
| Material | SiC |
| Configuration | Single Hex Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 1200 |
| Maximum Gate Source Voltage (V) | 18 |
| Maximum Continuous Drain Current (A) | 56 |
| Maximum Drain Source Resistance (mOhm) | 41@18V |
| Typical Gate Charge @ Vgs (nC) | 63@18V |
| Typical Input Capacitance @ Vds (pF) | 2290@800V |
| Maximum Power Dissipation (mW) | 300000 |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 14 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Typical Turn-On Delay Time (ns) | 11 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tape and Reel |
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