欧盟限制某些有害物质的使用 | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
产品类别 | Power MOSFET |
Process Technology | TMOS |
Configuration | Single Quad Drain |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 400 |
Maximum Gate Source Voltage (V) | 20 |
Maximum Gate Threshold Voltage (V) | 2.5 |
Maximum Continuous Drain Current (A) | 18 |
Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (mOhm) | 30@10V |
Typical Gate Charge @ Vgs (nC) | 8@10V |
Typical Gate Charge @ 10V (nC) | 8 |
Typical Input Capacitance @ Vds (pF) | 440@20V |
Maximum Power Dissipation (mW) | 2000 |
Typical Fall Time (ns) | 33 |
Typical Rise Time (ns) | 2 |
Typical Turn-Off Delay Time (ns) | 20 |
Typical Turn-On Delay Time (ns) | 4 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Packaging | Tape and Reel |
Supplier Temperature Grade | Automotive |
Automotive | Yes |
AEC Qualified Number | AEC-Q101 |
Standard Package Name | DFN |
Pin Count | 6 |
Supplier Package | DFN-MD EP |
Military | No |
Mounting | Surface Mount |
Package Height | 0.61(Max) |
Package Length | 2.1(Max) |
Package Width | 2.1(Max) |
PCB changed | 6 |
Lead Shape | No Lead |