欧盟限制某些有害物质的使用 | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Obsolete |
HTS | 8541.29.00.95 |
产品类别 | Power MOSFET |
Process Technology | CoolMOS CE |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 650 |
Maximum Gate Source Voltage (V) | 20 |
Maximum Gate Threshold Voltage (V) | 3.5 |
Maximum Continuous Drain Current (A) | 5.2 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (mOhm) | 1500@10V |
Typical Gate Charge @ Vgs (nC) | 10.5@10V |
Typical Gate Charge @ 10V (nC) | 10.5 |
Typical Input Capacitance @ Vds (pF) | 225@100V |
Maximum Power Dissipation (mW) | 28000 |
Typical Fall Time (ns) | 18.2 |
Typical Rise Time (ns) | 5.9 |
Typical Turn-Off Delay Time (ns) | 33 |
Typical Turn-On Delay Time (ns) | 7.7 |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tube |
Supplier Temperature Grade | Automotive |
Automotive | No |
Pin Count | 3 |
Supplier Package | TO-251 |
Military | No |
Mounting | Through Hole |
Package Height | 6.22 |
Package Length | 6.5 |
Package Width | 2.3 |
PCB changed | 3 |
Tab | Tab |