欧盟限制某些有害物质的使用 | Compliant |
ECCN (US) | EAR99 |
HTS | 8541.29.00.95 |
产品类别 | Power MOSFET |
Material | Si |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 600 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Continuous Drain Current (A) | 11 |
Maximum Drain Source Resistance (mOhm) | 650@10V |
Typical Gate Charge @ Vgs (nC) | 34@10V |
Typical Gate Charge @ 10V (nC) | 34 |
Typical Input Capacitance @ Vds (pF) | 1320@300V |
Maximum Power Dissipation (mW) | 45000 |
Typical Fall Time (ns) | 22 |
Typical Rise Time (ns) | 25 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tube |
Automotive | No |
Pin Count | 3 |
Supplier Package | TO-220SIS |
Military | No |
Mounting | Through Hole |
Package Height | 15 |
Package Length | 10 |
Package Width | 4.5 |
PCB changed | 3 |
Tab | Tab |