欧盟限制某些有害物质的使用 | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Typical Reverse Recovery Time (ns) | 41 |
Typical Gate Threshold Voltage (V) | 1.45 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 1133 |
Typical Gate Plateau Voltage (V) | 2.5 |
Typical Diode Forward Voltage (V) | 0.8 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Diode Forward Voltage (V) | 1.1 |
Maximum Gate Resistance (Ohm) | 2 |
产品类别 | Power MOSFET |
Process Technology | NextPower |
Configuration | Single Triple Source |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 25 |
Maximum Gate Source Voltage (V) | 20 |
Operating Junction Temperature (°C) | -55 to 175 |
Maximum Gate Threshold Voltage (V) | 1.95 |
Maximum Continuous Drain Current (A) | 100 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (mOhm) | 1.3@10V |
Typical Gate Charge @ Vgs (nC) | 65@10V|31@4.5V|66@10V |
Typical Gate Charge @ 10V (nC) | 66 |
Typical Gate to Drain Charge (nC) | 8.3 |
Typical Gate to Source Charge (nC) | 9.7 |
Typical Reverse Recovery Charge (nC) | 36 |
Typical Input Capacitance @ Vds (pF) | 4173@12V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 347@12V |
Minimum Gate Threshold Voltage (V) | 1.05 |
Typical Output Capacitance (pF) | 994 |
Maximum Power Dissipation (mW) | 179000 |
Typical Fall Time (ns) | 29 |
Typical Rise Time (ns) | 42 |
Typical Turn-Off Delay Time (ns) | 60 |
Typical Turn-On Delay Time (ns) | 32 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Packaging | Tape and Reel |
Automotive | No |
Standard Package Name | FPAK |
Pin Count | 5 |
Supplier Package | LFPAK |
Military | No |
Mounting | Surface Mount |
Package Height | 1.1(Max) |
Package Length | 5(Max) |
Package Width | 4.1(Max) |
PCB changed | 4 |
Tab | Tab |
Lead Shape | Gull-wing |