| 欧盟限制某些有害物质的使用 | Compliant |
| ECCN (US) | EAR99 |
| Part Status | NRND |
| HTS | 8541.29.00.95 |
| 产品类别 | Power MOSFET |
| Process Technology | TMOS |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Voltage (V) | ±12 |
| Maximum Continuous Drain Current (A) | 0.86 |
| Maximum Drain Source Resistance (mOhm) | 350@4.5V |
| Typical Gate Charge @ Vgs (nC) | 0.72@4.5V |
| Typical Input Capacitance @ Vds (pF) | 34@20V |
| Maximum Power Dissipation (mW) | 410 |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 11 |
| Typical Turn-Off Delay Time (ns) | 11 |
| Typical Turn-On Delay Time (ns) | 5 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Pin Count | 6 |
| Supplier Package | TSSOP |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Length | 2.2(Max) |
| Package Width | 1.35(Max) |
| PCB changed | 6 |
种类齐全 一站购物
正品保障 源头可溯
极速物流 在线跟踪
优质服务 省心省时
客服企业微信
