欧盟限制某些有害物质的使用 | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
产品类别 | Power MOSFET |
Process Technology | TMOS |
Configuration | Single Triple Source |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | 20 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Continuous Drain Current (A) | 100 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 10 |
Maximum Drain Source Resistance (mOhm) | 4.8@10V |
Typical Gate Charge @ Vgs (nC) | 73.1@10V |
Typical Gate Charge @ 10V (nC) | 73.1 |
Typical Input Capacitance @ Vds (pF) | 4140@25V |
Maximum Power Dissipation (mW) | 238000 |
Typical Fall Time (ns) | 31 |
Typical Rise Time (ns) | 27 |
Typical Turn-Off Delay Time (ns) | 57 |
Typical Turn-On Delay Time (ns) | 15 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Packaging | Tape and Reel |
Supplier Temperature Grade | Automotive |
Automotive | Yes |
AEC Qualified Number | AEC-Q101 |
Pin Count | 5 |
Supplier Package | LFPAK |
Military | No |
Mounting | Surface Mount |
Package Height | 1.1(Max) |
Package Length | 5(Max) |
Package Width | 4.1(Max) |
PCB changed | 4 |
Tab | Tab |