| 欧盟限制某些有害物质的使用 | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| 产品类别 | Power MOSFET |
| Material | SiC |
| Configuration | Single Hex Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 650 |
| Maximum Gate Source Voltage (V) | 22 |
| Maximum Continuous Drain Current (A) | 45 |
| Maximum Drain Source Resistance (mOhm) | 67@20V |
| Typical Gate Charge @ Vgs (nC) | 73@20V |
| Typical Input Capacitance @ Vds (pF) | 1370@400V |
| Maximum Power Dissipation (mW) | 208000 |
| Typical Fall Time (ns) | 9 |
| Typical Rise Time (ns) | 9 |
| Typical Turn-Off Delay Time (ns) | 35 |
| Typical Turn-On Delay Time (ns) | 16 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tape and Reel |
| Automotive | No |
| Pin Count | 8 |
| Supplier Package | H2PAK |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 4.8(Max) |
| Package Length | 10.4(Max) |
| Package Width | 8.9(Max) |
| PCB changed | 7 |
| Tab | Tab |
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