| 欧盟限制某些有害物质的使用 | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Obsolete |
| HTS | 8541.29.00.95 |
| 产品类别 | Power MOSFET |
| Process Technology | HEXFET |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±12 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Continuous Drain Current (A) | 15 |
| Maximum Drain Source Resistance (mOhm) | 7.5@10V |
| Typical Gate Charge @ Vgs (nC) | 37@5V |
| Typical Gate to Drain Charge (nC) | 13 |
| Typical Gate to Source Charge (nC) | 8.9 |
| Typical Reverse Recovery Charge (nC) | 99 |
| Typical Input Capacitance @ Vds (pF) | 3480@25V |
| Typical Output Capacitance (pF) | 870 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Fall Time (ns) | 44 |
| Typical Rise Time (ns) | 18 |
| Typical Turn-Off Delay Time (ns) | 51 |
| Typical Turn-On Delay Time (ns) | 17 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tube |
| Automotive | No |
| Standard Package Name | SOP |
| Pin Count | 8 |
| Supplier Package | SOIC |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) |
| Package Length | 5(Max) |
| Package Width | 4(Max) |
| PCB changed | 8 |
| Lead Shape | Gull-wing |
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