欧盟限制某些有害物质的使用 | Compliant |
ECCN (US) | EAR99 |
Part Status | Obsolete |
HTS | 8541.29.00.95 |
产品类别 | Power MOSFET |
Material | Si |
Process Technology | DirectFET |
Configuration | Single Octal Source Hex Drain |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Continuous Drain Current (A) | 33 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 20 |
Maximum Drain Source Resistance (mOhm) | 1.5@10V |
Typical Gate Charge @ Vgs (nC) | 200@10V |
Typical Gate Charge @ 10V (nC) | 200 |
Typical Input Capacitance @ Vds (pF) | 12320@25V |
Maximum Power Dissipation (mW) | 3300 |
Typical Fall Time (ns) | 39 |
Typical Rise Time (ns) | 43 |
Typical Turn-Off Delay Time (ns) | 78 |
Typical Turn-On Delay Time (ns) | 17 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Packaging | Tape and Reel |
Automotive | No |
Pin Count | 15 |
Supplier Package | Direct-FET L8 |
Military | No |
Mounting | Surface Mount |
Package Height | 0.49(Max) |
Package Length | 7.1(Max) |
Package Width | 9.15(Max) |
PCB changed | 15 |
Lead Shape | No Lead |