欧盟限制某些有害物质的使用 | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
产品类别 | Power MOSFET |
Material | Si |
Process Technology | NexFET |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 2.2 |
Maximum Continuous Drain Current (A) | 169 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (mOhm) | 4.2@10V |
Typical Gate Charge @ Vgs (nC) | 44@10V|21@4.5V |
Typical Gate Charge @ 10V (nC) | 44 |
Typical Input Capacitance @ Vds (pF) | 3900@30V |
Maximum Power Dissipation (mW) | 250000 |
Typical Fall Time (ns) | 5.6 |
Typical Rise Time (ns) | 5.3 |
Typical Turn-Off Delay Time (ns) | 24.2 |
Typical Turn-On Delay Time (ns) | 7.8 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Packaging | Tube |
Automotive | No |
Pin Count | 3 |
Supplier Package | TO-220 |
Military | No |
Mounting | Through Hole |
Package Height | 9.25(Max) |
Package Length | 10.36(Max) |
Package Width | 4.7(Max) |
PCB changed | 3 |
Tab | Tab |