欧盟限制某些有害物质的使用 | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | NRND |
HTS | 8541.29.00.95 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 4 |
Typical Gate Plateau Voltage (V) | 5.3 |
Typical Diode Forward Voltage (V) | 0.88 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Diode Forward Voltage (V) | 1.2 |
产品类别 | Power MOSFET |
Material | Si |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 1500 |
Maximum Gate Source Voltage (V) | ±20 |
Operating Junction Temperature (°C) | -55 to 150 |
Maximum Continuous Drain Current (A) | 2 |
Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum IDSS (uA) | 100 |
Maximum Drain Source Resistance (mOhm) | 13000@10V |
Typical Gate Charge @ Vgs (nC) | 37.5@10V |
Typical Gate Charge @ 10V (nC) | 37.5 |
Typical Gate to Drain Charge (nC) | 20 |
Typical Gate to Source Charge (nC) | 2.7 |
Typical Input Capacitance @ Vds (pF) | 380@30V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 40@30V |
Typical Output Capacitance (pF) | 70 |
Maximum Power Dissipation (mW) | 80000 |
Typical Fall Time (ns) | 59 |
Typical Rise Time (ns) | 37 |
Typical Turn-Off Delay Time (ns) | 152 |
Typical Turn-On Delay Time (ns) | 12 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Automotive | No |
Standard Package Name | TO-263 |
Pin Count | 3 |
Supplier Package | D2PAK |
Military | No |
Mounting | Surface Mount |
Package Height | 4.5 |
Package Length | 10 |
Package Width | 9.2 |
PCB changed | 2 |
Tab | Tab |
Lead Shape | Gull-wing |