欧盟限制某些有害物质的使用 | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Typical Reverse Recovery Time (ns) | 34 |
Typical Gate Threshold Voltage (V) | 1.7 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 15 |
Typical Gate Plateau Voltage (V) | 3.2 |
Typical Diode Forward Voltage (V) | 0.96 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Diode Forward Voltage (V) | 1.25 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 3.05 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 171 |
产品类别 | Power MOSFET |
Configuration | Dual Dual Drain |
Channel Mode | Enhancement |
Channel Type | P |
Number of Elements per Chip | 2 |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 |
Operating Junction Temperature (°C) | -55 to 150 |
Maximum Gate Threshold Voltage (V) | 2.5 |
Maximum Continuous Drain Current (A) | 3.05 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 2 |
Maximum Drain Source Resistance (mOhm) | 85@10V |
Typical Gate Charge @ Vgs (nC) | 16@10V |
Typical Gate Charge @ 10V (nC) | 16 |
Typical Gate to Drain Charge (nC) | 4.5 |
Typical Gate to Source Charge (nC) | 2 |
Typical Reverse Recovery Charge (nC) | 30 |
Typical Input Capacitance @ Vds (pF) | 520@24V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 70@24V |
Minimum Gate Threshold Voltage (V) | 1 |
Typical Output Capacitance (pF) | 170 |
Maximum Power Dissipation (mW) | 2000 |
Typical Fall Time (ns) | 35|45 |
Typical Rise Time (ns) | 42|16 |
Typical Turn-Off Delay Time (ns) | 32|45 |
Typical Turn-On Delay Time (ns) | 12|16 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Automotive | No |
Standard Package Name | SOP |
Pin Count | 8 |
Supplier Package | SOIC N |
Military | No |
Mounting | Surface Mount |
Package Height | 1.5(Max) |
Package Length | 5(Max) |
Package Width | 4(Max) |
PCB changed | 8 |
Lead Shape | Gull-wing |