欧盟限制某些有害物质的使用 | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
产品类别 | Power MOSFET |
Process Technology | NexFET |
Configuration | Single Quad Drain Triple Source |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 25 |
Maximum Gate Source Voltage (V) | 16 |
Maximum Gate Threshold Voltage (V) | 1.9 |
Maximum Continuous Drain Current (A) | 31 |
Maximum Drain Source Resistance (mOhm) | 2.4@10V |
Typical Gate Charge @ Vgs (nC) | 13.3@4.5V |
Typical Gate to Drain Charge (nC) | 3.5 |
Typical Gate to Source Charge (nC) | 5.3 |
Typical Reverse Recovery Charge (nC) | 41 |
Typical Input Capacitance @ Vds (pF) | 2040@12.5V |
Typical Output Capacitance (pF) | 1600 |
Maximum Power Dissipation (mW) | 3100 |
Typical Fall Time (ns) | 9 |
Typical Rise Time (ns) | 18.4 |
Typical Turn-Off Delay Time (ns) | 16 |
Typical Turn-On Delay Time (ns) | 11.9 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Automotive | No |
Standard Package Name | SON |
Pin Count | 8 |
Supplier Package | SON EP |
Military | No |
Mounting | Surface Mount |
Package Height | 1.05(Max) |
Package Length | 5.1(Max) |
Package Width | 6.1(Max) |
PCB changed | 8 |