欧盟限制某些有害物质的使用 | Compliant |
ECCN (US) | EAR99 |
Part Status | NRND |
HTS | 8541.21.00.95 |
产品类别 | Power MOSFET |
Configuration | Single Quad Drain Triple Source |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 20 |
Maximum Gate Source Voltage (V) | ±8 |
Maximum Continuous Drain Current (A) | 17 |
Maximum Drain Source Resistance (mOhm) | 3.5@4.5V |
Typical Gate Charge @ Vgs (nC) | 47@4.5V |
Maximum Power Dissipation (mW) | 3500 |
Typical Fall Time (ns) | 72 |
Typical Rise Time (ns) | 44 |
Typical Turn-Off Delay Time (ns) | 150 |
Typical Turn-On Delay Time (ns) | 40 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Automotive | No |
Standard Package Name | SOP |
Pin Count | 8 |
Supplier Package | SOIC N |
Military | No |
Mounting | Surface Mount |
Package Height | 1.55(Max) |
Package Length | 5(Max) |
Package Width | 4(Max) |
PCB changed | 8 |
Lead Shape | Gull-wing |