欧盟限制某些有害物质的使用 | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
产品类别 | Power MOSFET |
Process Technology | TrenchFET |
Configuration | Single Quad Drain |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 190 |
Maximum Gate Source Voltage (V) | ±16 |
Maximum Gate Threshold Voltage (V) | 1.5 |
Maximum Continuous Drain Current (A) | 1.5 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (mOhm) | 2400@4.5V |
Typical Gate Charge @ Vgs (nC) | 2.3@4.5V|4.3@10V |
Typical Gate Charge @ 10V (nC) | 4.3 |
Typical Input Capacitance @ Vds (pF) | 135@50V |
Maximum Power Dissipation (mW) | 2400 |
Typical Fall Time (ns) | 15 |
Typical Rise Time (ns) | 16 |
Typical Turn-Off Delay Time (ns) | 30 |
Typical Turn-On Delay Time (ns) | 12 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Automotive | No |
Pin Count | 6 |
Supplier Package | PowerPAK SC-75 |
Military | No |
Mounting | Surface Mount |
Package Height | 0.75 |
Package Length | 1.6 |
Package Width | 1.6 |
PCB changed | 6 |