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SIB452DK-T1-GE3

供应商型号:SIB452DK-T1-GE3

含税单价5.7300

品      牌Vishay 期货周期75 星期

参数 Trans MOSFET N-CH 190V 1.5A 6-Pin PowerPAK SC-75 T/R
数据表 SIB452DK-T1-GE3 PDF资料
现货批次 2019+
数量
+-
库存:9
交期7-10工作日
递增 起订1       递增倍数1
阶梯价格(人民币含税)
  • 1件以上¥5.73
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欧盟限制某些有害物质的使用 Compliant
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95
产品类别 Power MOSFET
Process Technology TrenchFET
Configuration Single Quad Drain
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 190
Maximum Gate Source Voltage (V) ±16
Maximum Gate Threshold Voltage (V) 1.5
Maximum Continuous Drain Current (A) 1.5
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (mOhm) 2400@4.5V
Typical Gate Charge @ Vgs (nC) 2.3@4.5V|4.3@10V
Typical Gate Charge @ 10V (nC) 4.3
Typical Input Capacitance @ Vds (pF) 135@50V
Maximum Power Dissipation (mW) 2400
Typical Fall Time (ns) 15
Typical Rise Time (ns) 16
Typical Turn-Off Delay Time (ns) 30
Typical Turn-On Delay Time (ns) 12
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Automotive No
Pin Count 6
Supplier Package PowerPAK SC-75
Military No
Mounting Surface Mount
Package Height 0.75
Package Length 1.6
Package Width 1.6
PCB changed 6
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