| 欧盟限制某些有害物质的使用 | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.95 |
| 产品类别 | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 50 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 0.31 |
| Maximum Drain Source Resistance (mOhm) | 3500@10V |
| Typical Gate Charge @ Vgs (nC) | 0.95@10V|0.45@4.5V |
| Typical Gate Charge @ 10V (nC) | 0.95 |
| Typical Input Capacitance @ Vds (pF) | 23.2@25V |
| Maximum Power Dissipation (mW) | 540 |
| Typical Fall Time (ns) | 7.6 |
| Typical Rise Time (ns) | 2.5 |
| Typical Turn-Off Delay Time (ns) | 13.8 |
| Typical Turn-On Delay Time (ns) | 3.2 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Military | No |
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