欧盟限制某些有害物质的使用 | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
产品类别 | Power MOSFET |
Configuration | Single Hex Drain |
Channel Mode | Enhancement |
Channel Type | P |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 20 |
Maximum Gate Source Voltage (V) | ±12 |
Maximum Continuous Drain Current (A) | 3.9 |
Maximum Drain Source Resistance (mOhm) | 46(Typ)@4.5V |
Typical Gate Charge @ Vgs (nC) | 9.7@4.5V |
Typical Input Capacitance @ Vds (pF) | 710@5V |
Maximum Power Dissipation (mW) | 2500 |
Typical Fall Time (ns) | 35 |
Typical Rise Time (ns) | 22 |
Typical Turn-Off Delay Time (ns) | 42 |
Typical Turn-On Delay Time (ns) | 14 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Automotive | No |
Standard Package Name | Chip FET |
Pin Count | 8 |
Supplier Package | Chip FET |
Military | No |
Mounting | Surface Mount |
Package Height | 1.05 |
Package Length | 3.05 |
Package Width | 1.65 |
PCB changed | 8 |
Lead Shape | Flat |