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JAN2N5666S

供应商型号:JAN2N5666S

含税单价174.8100

品      牌Microsemi 期货周期110 星期

参数 Trans GP BJT NPN 200V 5A 1200mW 3-Pin TO-39 Bag
数据表 JAN2N5666S PDF资料
现货批次 1545+
数量
+-
库存:165
交期7-10工作日
递增 起订1       递增倍数1
阶梯价格(人民币含税)
  • 1-25件¥174.81
  • 25-100件¥109.24
  • 100件以上¥87.44
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欧盟限制某些有害物质的使用 Not Compliant
ECCN (US) EAR99
Part Status Active
Type NPN
产品类别 Bipolar Power
Material Si
Configuration Single
Number of Elements per Chip 1
Maximum Collector base Voltage (V) 250
Maximum Collector-Emitter Voltage (V) 200
Maximum Emitter base Voltage (V) 6
Maximum base Emitter Saturation Voltage (V) 1.5@1A@5A|1.2@0.3A@3A
Maximum Collector-Emitter Saturation Voltage (V) 0.4@0.3A@3A|1@1A@5A
Maximum DC Collector Current (A) 5
Minimum DC Current Gain 15@3A@5V|5@5A@5V|40@0.5A@2V|40@1A@5V
Maximum Power Dissipation (mW) 1200
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Packaging Bag
Supplier Temperature Grade Military
Automotive No
Standard Package Name TO-205-AF
Pin Count 3
Supplier Package TO-39
Mounting Through Hole
Diameter 9.4(Max)
Package Height 6.6(Max)
PCB changed 3
Lead Shape Through Hole
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