欧盟限制某些有害物质的使用 | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.40.60.50 |
Type | Chip |
Phototransistor Type | Phototransistor |
Lens Shape Type | Flat |
Material | Silicon |
Number of Channels per Chip | 1 |
Polarity | NPN |
Half Intensity Angle Degrees (°) | 120 |
Viewing Orientation | Top View |
Peak Wavelength (nm) | 850 |
Maximum Collector Current (mA) | 50 |
Maximum Dark Current (nA) | 100 |
Maximum Emitter-Collector Voltage (V) | 7 |
Maximum Collector-Emitter Voltage (V) | 70 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.17 |
Maximum Power Dissipation (mW) | 120 |
Fabrication Technology | NPN Transistor |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Temperature (°C) | 100 |
Packaging | Tape and Reel |
Standard Package Name | DIP SMD |
Pin Count | 3 |
Supplier Package | DIL SMT |
Mounting | Surface Mount |
Package Height | 1.05(Max) |
Package Length | 2.1(Max) |
Package Width | 2.7(Max) |
PCB changed | 3 |
Lead Shape | Gull-wing |