| 欧盟限制某些有害物质的使用 | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| Type | IR Chip |
| Phototransistor Type | Phototransistor |
| Lens Shape Type | Domed |
| Material | Silicon |
| Number of Channels per Chip | 1 |
| Polarity | NPN |
| Half Intensity Angle Degrees (°) | 50 |
| Viewing Orientation | Top View |
| Peak Wavelength (nm) | 890 |
| Cut-Off Filter | Visible Cut-off |
| Maximum Rise Time (ns) | 5000/8000 |
| Maximum Fall Time (ns) | 5000/8000 |
| Maximum Light Current (uA) | 3000/4800 |
| Maximum Collector Current (mA) | 50 |
| Maximum Dark Current (nA) | 50 |
| Maximum Collector-Emitter Voltage (V) | 35 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.15 |
| Maximum Power Dissipation (mW) | 165 |
| Fabrication Technology | NPN Transistor |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 100 |
| Standard Package Name | T-1 |
| Pin Count | 2 |
| Supplier Package | T-1 |
| Mounting | Through Hole |
| Diameter | 3.4(Max) |
| Package Height | 4.8(Max) |
| PCB changed | 2 |
| Lead Shape | Through Hole |
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