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JAN2N3507

供应商型号:JAN2N3507

含税单价86.1800

品      牌Microchip Technology 期货周期35 星期

参数 Trans GP BJT NPN 50V 3A 1000mW 3-Pin TO-39 Bag
数据表 JAN2N3507 PDF资料

供应商现货库存不足,可定期货,请点击联系客服
阶梯价格(人民币含税)
  • 100-250件¥86.18
  • 250-500件¥85.33
  • 500-1000件¥84.47
  • 1000件以上¥84.33
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欧盟限制某些有害物质的使用 Not Compliant
ECCN (US) EAR99
Part Status Active
HTS 8541.10.00.50
Type NPN
产品类别 Bipolar Power
Material Si
Configuration Single
Number of Elements per Chip 1
Maximum Collector base Voltage (V) 80
Maximum Collector-Emitter Voltage (V) 50
Maximum Emitter base Voltage (V) 5
Maximum base Emitter Saturation Voltage (V) 1@50mA@500mA|1.3@150mA@1.5A|2@250mA@2.5A
Maximum Collector-Emitter Saturation Voltage (V) 1@150mA@1.5A|1.5@250mA@2.5A|0.5@50mA@500mA
Maximum DC Collector Current (A) 3
Minimum DC Current Gain 30@2.5A@3V|40@1.5A@2V|25@3A@5V|50@500mA@1V
Maximum Power Dissipation (mW) 1000
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Packaging Bag
Supplier Temperature Grade Military
Automotive No
Standard Package Name TO-205-AF
Pin Count 3
Supplier Package TO-39
Mounting Through Hole
Diameter 9.4(Max)
Package Height 6.6(Max)
PCB changed 3
Lead Shape Through Hole
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