| ECCN (US) | EAR99 |
| 产品类别 | Power MOSFET |
| Material | Si |
| Process Technology | U-MOS VI |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Voltage (V) | 8 |
| Maximum Continuous Drain Current (A) | 6 |
| Maximum Drain Source Resistance (mOhm) | 29.8@4.5V |
| Typical Gate Charge @ Vgs (nC) | 12.8@4.5V |
| Typical Input Capacitance @ Vds (pF) | 840@10V |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Temperature Grade | Automotive |
| Automotive | Yes |
| AEC Qualified Number | AEC-Q101 |
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