| 欧盟限制某些有害物质的使用 | Compliant |
| ECCN (US) | EAR99 |
| 产品类别 | Power MOSFET |
| Material | Si |
| Process Technology | DTMOSVI |
| Configuration | Single Dual Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 650 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Continuous Drain Current (A) | 24 |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Maximum IDSS (uA) | 2 |
| Maximum Drain Source Resistance (mOhm) | 110@10V |
| Typical Gate Charge @ Vgs (nC) | 40@10V |
| Typical Gate Charge @ 10V (nC) | 40 |
| Typical Input Capacitance @ Vds (pF) | 2250@300V |
| Maximum Power Dissipation (mW) | 190000 |
| Typical Fall Time (ns) | 4 |
| Typical Rise Time (ns) | 18 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tube |
| Automotive | No |
| Pin Count | 4 |
| Supplier Package | TO-247 |
| Military | No |
| Mounting | Through Hole |
| Package Height | 20.95 |
| Package Length | 15.94 |
| Package Width | 5 |
| PCB changed | 4 |
| Tab | Tab |
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