| 欧盟限制某些有害物质的使用 | Compliant |
| ECCN (US) | EAR99 |
| HTS | 8541.29.00.95 |
| 产品类别 | Power MOSFET |
| Process Technology | TrenchFET |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 40 |
| Maximum Gate Source Voltage (V) | 20 |
| Maximum Gate Threshold Voltage (V) | 2.4 |
| Maximum Continuous Drain Current (A) | 24 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain Source Resistance (mOhm) | 3.99@10V |
| Typical Gate Charge @ Vgs (nC) | 12.4@4.5V|27@10V |
| Typical Gate Charge @ 10V (nC) | 27 |
| Typical Input Capacitance @ Vds (pF) | 2000@20V |
| Maximum Power Dissipation (mW) | 4100 |
| Typical Fall Time (ns) | 8|5 |
| Typical Rise Time (ns) | 5|55 |
| Typical Turn-Off Delay Time (ns) | 25|22 |
| Typical Turn-On Delay Time (ns) | 25|12 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
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