欧盟限制某些有害物质的使用 | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
产品类别 | Power MOSFET |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 200 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 300 |
Maximum Drain Source Resistance (mOhm) | 4@10V |
Typical Gate Charge @ Vgs (nC) | 375@10V |
Typical Gate Charge @ 10V (nC) | 375 |
Typical Input Capacitance @ Vds (pF) | 23800@25V |
Maximum Power Dissipation (mW) | 1250000 |
Typical Fall Time (ns) | 13 |
Typical Rise Time (ns) | 43 |
Typical Turn-Off Delay Time (ns) | 184 |
Typical Turn-On Delay Time (ns) | 44 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Pin Count | 3 |
Supplier Package | PLUS 247 |
Military | No |
Mounting | Through Hole |
Package Height | 21.34(Max) |
Package Length | 16.13(Max) |
Package Width | 5.21(Max) |
PCB changed | 3 |
Tab | Tab |