欧盟限制某些有害物质的使用 | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
产品类别 | Power MOSFET |
Process Technology | TMOS |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | 8 |
Maximum Gate Threshold Voltage (V) | 0.95 |
Maximum Continuous Drain Current (A) | 0.9 |
Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (mOhm) | 460@4.5V |
Typical Gate Charge @ Vgs (nC) | 0.62@4.5V |
Typical Input Capacitance @ Vds (pF) | 45.4@15V |
Maximum Power Dissipation (mW) | 660 |
Typical Fall Time (ns) | 2 |
Typical Rise Time (ns) | 2 |
Typical Turn-Off Delay Time (ns) | 4 |
Typical Turn-On Delay Time (ns) | 1 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Pin Count | 3 |
Supplier Package | DFN |
Military | No |
Mounting | Surface Mount |
Package Height | 0.36(Max) |
Package Length | 0.62 |
Package Width | 0.62 |
PCB changed | 3 |