欧盟限制某些有害物质的使用 | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
产品类别 | Power MOSFET |
Process Technology | TrenchFET |
Configuration | Dual |
Channel Mode | Enhancement |
Channel Type | P|N |
Number of Elements per Chip | 2 |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 2.6 |
Maximum Continuous Drain Current (A) | 0.85 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (mOhm) | 940@10V@P Channel|280@10V@N Channel |
Typical Gate Charge @ Vgs (nC) | 1@4.5V@N Channel|1.2@4.5V@P Channel |
Typical Input Capacitance @ Vds (pF) | 38@15V@N Channel|40@15V@P Channel |
Maximum Power Dissipation (mW) | 1500 |
Typical Fall Time (ns) | 17@P Channel|32@N Channel |
Typical Rise Time (ns) | 39@P Channel|18@N Channel |
Typical Turn-Off Delay Time (ns) | 8@N Channel|10@P Channel |
Typical Turn-On Delay Time (ns) | 3@N Channel|4@P Channel |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Supplier Temperature Grade | Automotive |
Automotive | Yes |
AEC Qualified Number | AEC-Q101 |
Pin Count | 6 |
Supplier Package | SC-70 |
Military | No |
Mounting | Surface Mount |
Package Height | 1(Max) |
Package Length | 2 |
Package Width | 1.25 |
PCB changed | 6 |