| 欧盟限制某些有害物质的使用 | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| 产品类别 | Power MOSFET |
| Configuration | Dual Dual Drain |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Continuous Drain Current (A) | 9 |
| Maximum Drain Source Resistance (mOhm) | 15@20V |
| Typical Gate Charge @ Vgs (nC) | 30@10V |
| Typical Gate Charge @ 10V (nC) | 30 |
| Typical Input Capacitance @ Vds (pF) | 2060@15V |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 9.4 |
| Typical Turn-Off Delay Time (ns) | 24 |
| Typical Turn-On Delay Time (ns) | 11 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Standard Package Name | SOP |
| Pin Count | 8 |
| Supplier Package | SOIC |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 1.5 |
| Package Length | 4.9 |
| Package Width | 3.9 |
| PCB changed | 8 |
| Lead Shape | Gull-wing |
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