| 欧盟限制某些有害物质的使用 | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | LTB |
| 产品类别 | Power MOSFET |
| Process Technology | TMOS |
| Configuration | Single Seven Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 40 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Continuous Drain Current (A) | 300 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain Source Resistance (mOhm) | 0.65@10V |
| Typical Gate Charge @ Vgs (nC) | 220@10V |
| Typical Gate Charge @ 10V (nC) | 220 |
| Typical Input Capacitance @ Vds (pF) | 15900@25V |
| Maximum Power Dissipation (mW) | 429000 |
| Typical Fall Time (ns) | 52 |
| Typical Rise Time (ns) | 82 |
| Typical Turn-Off Delay Time (ns) | 106 |
| Typical Turn-On Delay Time (ns) | 54 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tape and Reel |
| Automotive | Yes |
| AEC Qualified Number | AEC-Q101 |
| Pin Count | 9 |
| Supplier Package | H-PSOF |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 2.4(Max) |
| Package Length | 10(Max) |
| Package Width | 10.48(Max) |
| PCB changed | 8 |
| Tab | Tab |
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