| 欧盟限制某些有害物质的使用 | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Typical Gate Threshold Voltage (V) | 0.83 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 24 |
| Typical Gate Plateau Voltage (V) | 1.5 |
| Typical Diode Forward Voltage (V) | 0.69 |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| 产品类别 | Power MOSFET |
| Process Technology | PowerTrench |
| Configuration | Single Quad Drain |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Voltage (V) | ±12 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 5.7 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain Source Resistance (mOhm) | 30@4.5V |
| Typical Gate Charge @ Vgs (nC) | 8.8@4.5V |
| Typical Gate to Drain Charge (nC) | 2.4 |
| Typical Gate to Source Charge (nC) | 0.9 |
| Typical Input Capacitance @ Vds (pF) | 701@10V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 125@10V |
| Minimum Gate Threshold Voltage (V) | 0.6 |
| Typical Output Capacitance (pF) | 163 |
| Maximum Power Dissipation (mW) | 2400 |
| Typical Fall Time (ns) | 8.6 |
| Typical Rise Time (ns) | 8.6 |
| Typical Turn-Off Delay Time (ns) | 21.5 |
| Typical Turn-On Delay Time (ns) | 9.8 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Standard Package Name | DFN |
| Pin Count | 6 |
| Supplier Package | WDFN EP |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 0.75 |
| Package Length | 2 |
| Package Width | 2 |
| PCB changed | 6 |
| Lead Shape | No Lead |
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